Objective Questions on P-N Junction Diode

  1. When the pn junction is forward biased the sequence of events that take place are

    Under construction.

  2. The depletion region of a pn junction is one, that is depleted of

    Under construction.

  3. The depletion region with in a pn junction is reduced when the junction has :

    Under construction.

  4. A silicon pn junction in forward condition has a voltage drop closer to

    Under construction.

  5. For a reverse biased pn junction, the electric current through the junction increases abruptly at

    Under construction.

  6. The reverse saturation electric current of a pn junction varies with temperature (T) as

    Under construction.

  7. The transition capacitance of a reverse biased pn junction having uniform doping on both sides, varies with junction voltage ( VB ) as

    Under construction.

  8. The leakage electric current of a pn junction is caused by

    Under construction.

  9. The junction capacitance of linearly graded junction varies with the applied reverse bias, VR as

    Under construction.

  10. The diffusion capacitance of a forward biased P+N junction diode with a steady electric current I depends on

    Under construction.

  11. The arrow direction in diode symbol indicates

    Under construction.

  12. The knee voltage (cut in voltage) of silicon diode

    Under construction.

  13. When the diode is forward biased, it is equivalent to

    Under construction.

  14. Under normal reverse bias voltage applied to diode, the reverse electric current in Si diode

    Under construction.

  15. Avalanche breakdown in a diode occurs when

    Under construction.

  16. Reverse saturation electric current in a silicon pn junction diode nearly doubles for very

    Under construction.

  17. A forward potential of 10 V is applied to a silicon diode. A resistance of 1KΩ is also in series with the diode. The electric current is

    Under construction.

  18. In the diode equation, the voltage equivalent of temperature

    Under construction.

  19. Barrier potential at the temperature (25°C) is 0.7 V, its value at 125°C is

    Under construction.

  20. When a reverse bias is applied to a diode, it will

    Under construction.